?2002 fairchild semiconductor corporation rev. b1, august 2006 pn100/pn100a/ MMBT100/MMBT100a absolute maximum ratings* t c =25 c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes: 1. these ratings are based on a maximum junction temperature of 150 degrees c. 2. these are steady state limits. the factory should be consulte d on applications involving pulsed or low duty cycle operations. electrical characteristics t c =25 c unless otherwise noted * pulse test: pulse width 300 s, duty cycle 2.0% symbol parameter value units v ceo collector-emitter voltage 45 v v cbo collector-base voltage 75 v v ebo emitter-base voltage 6.0 v i c collector current - continuous 500 ma t j , t stg junction and storage temperature -55 ~ +150 c symbol parameter test condition min. max. units off characteristics bv cbo collector-base breakdown voltage i c = 10 a, i e = 0 75 v bv ceo collector-emitter breakdown voltage * i c = 1ma, i b = 0 45 v bv ebo emitter-base breakdown voltage i e = 10 a, i c = 0 6.0 v i cbo collector-base cutoff current v cb = 60v 50 na i ces collector-emiitter cutoff current v ce = 40v 50 na i ebo emitter cutoff current v eb = 4v 50 na on characteristics h fe dc current gain i c = 100 a, v ce = 1.0v i c = 10ma, v ce = 1.0v i c = 100ma, v ce = 1.0v* i c = 150ma, v ce = 5.0v * 100 100a 100 100a 100 100a 80 240 100 300 100 100 100 450 600 350 v ce (sat) collector-emitter saturation voltage i c = 10ma, i b = 1.0ma i c = 200ma, i b = 20ma 0.2 0.4 v v v be (sat) base-emitter saturation voltage i c = 10ma, i b = 1.0ma i c = 200ma, i b = 20ma 0.85 1.0 v v small signal characteristics f t current gain bandwidth product v ce = 20v, i c = 20ma 250 mhz c obo output capacitance v cb = 5.0v, f = 1.0mhz 4.5 pf nf noise figure i c = 100 a, v ce = 5.0v r g = 2.0k ? , f = 1.0khz 100 100a 5.0 4.0 db db pn100/pn100a/MMBT100/MMBT100a npn general purpose amplifier ? this device is designed for general purpose amplifier applications at collector currents to 300ma. ? sourced from process 10. sot-23 1. base 2. emitter 3. collector 1 2 3 mark: n1/n1a to-92 1 1. emitter 2. base 3. collector mark: pn100/pn100a
?2002 fairchild semiconductor corporation rev. b1, august 2006 pn100/pn100a/ MMBT100/MMBT100a thermal characteristics t a =25 c unless otherwise noted * device mounted on fr-4 pcb 1.6? 1.6? 0.06." symbol parameter max. units pn100 pn100a *MMBT100 *MMBT100a p d total device dissipation derate above 25 c 625 5.0 350 2.8 mw mw/ c r jc thermal resistance, junction to case 83.3 c/w r ja thermal resistance, junction to ambient 200 357 c/w
?2002 fairchild semiconductor corporation rev. b1, august 2006 pn100/pn100a/ MMBT100/MMBT100a typical characteristics figure 1. typical pulsed current gain vs collector current figure 2. collector-emitter saturation voltage vs collector current figure 3. base-emitter saturation voltage vs collector current figure 4. base-emitter on voltage vs collector current figure 5. collector cutoff current vs ambient temperature figure 6. input and output capacitance vs reverse voltag vs collector current 10 20 30 50 100 200 300 500 0 100 200 300 400 i - collector current (ma) h - typical pulsed current gain c fe 125 c 25 c - 40 c vce = 5v voltage vs collector current 110100400 0.1 0.2 0.3 0.4 i - collector current (ma) v - collector-emitter voltage (v ) c cesat 25 c - 40 c 125 c = 10 base-emitter saturation voltage vs collector current 0.1 1 10 100 300 0.2 0.4 0.6 0.8 1 i - collector current (ma) v - collector-emitter voltage (v ) = 10 c besat 25 c - 40 c 125 c collector current 110100500 0.2 0.4 0.6 0.8 1 i - collector current (ma) v - base-emitter on voltage (v ) c beon v = 5v ce 25 c - 40 c 125 c 25 50 75 100 125 15 0 0. 1 1 10 t - ambie nt temp erature ( c) i - colle ctor current (na) a cbo v = 60v cb 0.1 1 10 10 0 0.1 1 10 100 v - collector voltage (v) capacitance (pf) cib cob f = 1.0 mhz ce
?2002 fairchild semiconductor corporation rev. b1, august 2006 pn100/pn100a/ MMBT100/MMBT100a typical characteristics (continued) figure 7. switching times vs collector current figure 8. power dissipation vs ambient temperature 10 20 30 50 100 200 30 0 0 30 60 90 120 150 180 210 240 270 300 i - collector current (ma) time (ns) ib1 = ib2 = ic / 10 v = 10 v c cc t s t d t f t r 025507510012515 0 0 100 200 300 400 500 600 700 temperature ( c) p - power dissipation (mw) d o to-92 sot-23
package dimensions pn100/pn100a/ MMBT100/MMBT100a dimensions in millimeters ?2002 fairchild semiconductor corporation rev. b1, august 2006 0.46 0.10 1.27typ (r2.29) 3.86max [1.27 0.20 ] 1.27typ [1.27 0.20 ] 3.60 0.20 14.47 0.40 1 .02 0.10 (0.25) 4.58 0.20 4.58 +0.25 ?.15 0.38 +0.1 0 ?.0 5 0.38 +0.10 ?.05 to-92
?2002 fairchild semiconductor corporation rev. b1, august 2006 pn100/pn100a/ MMBT100/MMBT100a package dimensions (continued) 0.96~1.14 0.12 0.03~0.1 0 0.38 re f 0.40 0.03 2.90 0.10 0.95 0.03 0.95 0.03 1.90 0.03 0.508ref 0.97ref 1.30 0.10 0.45~0.60 2.40 0.10 +0.05 ?.02 3 0.20 mi n 0.40 0.03 sot-23 dimensions in millimeters
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